GP1S36J0000F Datasheet, PDF (4/11 Pages) Sharp Electrionic Components – Phototransistor Output, Phototransistor Output, with Tilt Direction (3-direction) Detecting

■ Absolute Maximum Ratings
(T_a=25˚C)
Parameter
Symbol Rating
Unit
Forward current
I_F
50
mA
Input Reverse voltage
V_R
6
V
Power dissipation
P
75
mW
Collector-emitter voltage
Output Emitter-collector voltage
Collector current
V_CE1O
35
V
V_CE2O
V_E1CO
6
V
V_E2CO
I_C
20
mA
Collector power dissipation
P_C
75
mW
Total power dissipation
P_tot
100
mW
Operating temperature
T_opr −25 to +85 ˚C
Storage temperature
∗1_{Soldering temperature 1}
∗2_{Soldering temperature 2}
T_stg −40 to +100 ˚C
T_sol
260
˚C
T_sol
320
˚C
∗_{1 For MAX. 5 s (Soldering area is shown below)}
∗_{2 For MAX. 2 s (Eachterriral shall be hand-soldered at more 0.8mm for from bottom of resin pack-}
age)
GP1S36J0000F
1mm^MIN.
Soldering area
■ Electro-optical Characteristics
Parameter
Symbol
Condition
Input
∗3_Output
Forward voltage
Reverse current
Dark current
V_F
I_F=20mA
I_R
V_R=3V
I_CEO
V_CE=20V
Collector current
∗3_Transfer ∗4_{Leak current}
I_C
I_LEAK
V_CE=5V, I_F=5mA
V_CE=5V, I_F=5mA
charac- Collector-emitter saturation voltage V_CE(sat)
I_F=10mA, I_C=60μA
teristics
Response time
Rise time t_r
Fall time t_f
V_CE=5V, I_C=100μA, R_L=1kΩ
∗_{3 Output and coupling characteristics are common to the both phototransistors.}
∗_{4 Characteristics except leak current is measured at θ=0̊, φ=0̊.}
Leak current is the output current of transistor when θ=±90̊, φ=0̊ and IC=OFF.
MIN.
−
−
−
60
−
−
−
−
TYP.
1.2
−
−
−
−
−
50
50
(T_a=25˚C)
MAX. Unit
1.4
V
10
μA
100 nA
350 μA
15
μA
0.4
V
150
μs
150
μs
Sheet No.: D3-A05501EN
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