LRS1382 Datasheet, PDF(64/114 Page) Sharp Electrionic Components

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LRS1382 Datasheet, PDF (64/114 Pages) Sharp Electrionic Components – STACKED CHIP 32M FLASH AND 8M SRAM

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FUM00701

4 Command Definitions

Operations of the device are selected by the specific

commands written to the CUI (Command User Interface).

Since commands are partition-specific, it is important to

write commands within the target partitionâs address

range (see Table 5).

Each command except for the Full Chip Erase command

and OTP Program command affects only the mode of the

partition to which the command is written.

4.1 Read Array Command

Upon initial device power-up or after reset mode, all the

partitions in the device default to asynchronous read

mode in which 8-word page mode is available. The Read

Array command to a partition places the partition to read

array mode. The partition remains enabled for read array

mode until another valid command is written to the

partition. When RST# is at VIH, the Read Array

command is valid independent of the voltage on VPP.

Once the internal WSM (Write State Machine) has started

block erase, full chip erase, (page buffer) program or OTP

program in one partition, the partition will not recognize

the Read Array command until the WSM completes its

operation or unless the WSM is suspended via the Block

Erase Suspend or (Page Buffer) Program Suspend

command. However, the Read Array command can be

accepted in other partitions except for full chip erase or

OTP program operation.

Since LH28F320BX/LH28F640BX series provide dual

work capability, partitions not executing block erase or

(page buffer) program operation are allowed to set to the

read array mode and the memory array data within the

partitions can be read without suspending block erase or

(page buffer) program operation.

4.2 Read Identifier Codes/OTP Command

The read identifier codes/OTP mode is initiated by

writing the Read Identifier Codes/OTP command (90H)

to the target partition. Read operations to that partition

output the identifier codes or the data within the OTP

block. To terminate the operation, write another valid

command to the partition. In this mode, the manufacturer

code, device code, block lock configuration codes, read

configuration register code, partition configuration

the OTP block lock state can be read on the addresses

shown in Table 6 through Table 8. Once the internal

WSM has started block erase, full chip erase, (page

buffer) program or OTP program in one partition, the

partition will not recognize the Read Identifier Codes/

OTP command until the WSM completes its operation or

unless the WSM is suspended via the Block Erase

Suspend or (Page Buffer) Program Suspend command.

However, the Read Identifier Codes/OTP command can

be accepted in other partitions except for full chip erase or

OTP program operation. Like the Read Array command,

the Read Identifier Codes/OTP command functions

independently of the VPP voltage and RST# must be at

VIH.

To read the data in the OTP block, it is important to write

addresses within the OTP areaâs address range (refer to

Table 6 through Table 8).

Asynchronous page mode and synchronous burst mode

are not available for reading identifier codes/OTP. Read

operations for identifier codes or OTP block support

single asynchronous read cycle or single synchronous

read cycle.

Synchronous burst mode will be available for future device.

Appendix to Spec No.: MFM2-J13222 Model No.: LRS1382 March 1, 2001

Rev. 2.20

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