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LRS1331 Datasheet, PDF (13/26 Pages) Sharp Electrionic Components – Stacked Chip 16M Flash Memory and 4M SRAM
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Stacked Chip (16M Flash & 4M SRAM)
LRS1331
Write Cycle (F-CE Controlled)1
TA = -25°C to +85°C, VCC = 2.7 V to 3.6 V
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Write Cycle Time
tAVAV
90
ns
F-RP HIGH Recovery to F-CE going to LOW
tPHEL
1
µs
F-WE Setup to F-CE going LOW
tWLEL
0
ns
F-CE Pulse Width
tELEH
60
ns
F-WP VIH Setup to F-CE going HIGH
tSHEH
100
ns
F-VCCW Setup to F-CE going HIGH
tVPEH
100
ns
Address Setup to F-CE going HIGH
tAVEH
50
ns
Data Setup to F-CE going HIGH
tDVEH
50
ns
Data Hold from F-CE HIGH
tEHDX
0
ns
Address Hold from F-CE HIGH
tEHAX
0
ns
F-WE Hold from F-CE HIGH
tEHWH
0
ns
F-CE Pulse Width HIGH
tEHEL
20
ns
F-CE HIGH to F-RY/BY going LOW
tEHRL
100
ns
Write Recovery before Read
tEHGL
0
ns
F-VCCW Hold from Valid SRD, F-RY/BY HIGH Z tQVVL
0
ns
F-WP VIH Hold from Valid SRD, F-RY/BY HIGH tQVSL
0
ns
NOTES:
1. In system where F-CE defines the pulse width (within a F-WE timing waveform), all setup,
hold, and inactive F-WE times should be measured relative to the F-CE waveform.
2. Refer to the ‘Flash Memory Command Definition’ section for valid AIN and DIN for block erase or word write.
NOTES
2
2
Block Erase and Word Write Performance
TA = -25°C to +85°C, VCC = 2.7 V to 3.6 V
SYMBOL
PARAMETER
tWHQV1
tEHQV1
tWHQV2
tEHQV2
tWHQV3
tEHQV3
tWHQV4
tEHQV4
tWHRZ1
tEHRZ1
tWHRZ2
tEHRZ2
Word Write Time 32K-word Block
Word Write Time 4K-word Block
Block Write Time 32K-word Block
Block Write Time 4K-word Block
Block Erase Time 32K-word Block
Block Erase Time 4K-word Bock
Full Chip Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Word Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
NOTES:
1. Reference values at TA = +25°C and VCC = 3.0 V, VPP = 3.0 V.
2. Sampled, but not 100% tested.
3. Excludes system-level overhead.
VCCW = 2.7 V to 3.6 V
MIN. TYP.1 MAX.2
33
200
36
200
1.1
2.4
0.15
0.3
1.2
6
0.6
5
42
210
27.6 200
0.64
5
6.0
15
16.0
30
UNIT
µs
µs
s
s
s
s
s
µs
s
µs
µs
NOTES
3
3
3
3
3
3
3
3
3
Data Sheet
13
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