LRS1329 Datasheet, PDF (11/27 Pages) Sharp Electrionic Components – Stacked Chip 16M Flash and 2M SRAM

SHARI=
LRS1329
9
11. DC Characteristics
Parameter
Input leakage current (Iti)
)utput’ leakage current (IJ
F-V, V, Standby Current
c _Character istics (T.= -25 “r: to +85 , V,=
Symbo1
Conditions
G#pJy
I _LX
V,, =V, or CND
Ll
VOIR=V, ^{or GND}
-1.5
bcs
(*2,7)
F-E=F-3=F-V, fO.2V
F--%F-V, fO.2V
or F-CNDfO. 2V
F-z=F -@=V,,
F-%‘=V,, or VIL
2.7V to 3.6V)
+1.5 pA
25 50 PA
0.2
2mA
Deep Power-Down Current
V, Read Current
bCD (*7)
J,, Word/Byte Write Current
V, Block Erase Current
J, Word/Byte Write Block I _cm
!rase Suspend Current
I,,,
T-V_PI ^{VP, St andby or}
I _PPS
ReadCurrent
I _PPP
V, Deep Power-Down
I _PPD
Current
fpp Word/Byte Write Curren I _PW
VP, Block Erase ‘Current
I _PPE
I,, Word/Byte Write or
I _PPIS
slack Erase Suspend
I _PPES
Zurrent
S-V, ^{Standby Current}
I _SB
:-%=F-CNDfO. 2V,
LOU(TF-RY~bC-mA
I
MOS Input
I
:-Cj?=F-GNDf=, 5Mlz. I,,, =OmA I
TL Input
%=F-GND, f=SMBz, Iom =omA
F-V, =vpp,
F-Vpp=vpp”
F-CE=V,,
I
I
F-V,, = F-V,,
F-V, > F-V,,
F-@=F-GNDfO. 2V
F-V, =v,,,
F - ‘4, =VPPII
F-V, =V,,,
S-CE,, s-cE.&s-v,-0.2v
or S-CE,IO. 2V
.,I
I
I I4mA
I
I
I
I I6b
I
I
I
I lo21opoAl
I
I
I
15 pA
Operation Current
ISBl
S-CE,=V,aor S-CEa=ViL
3.0 DlA
I _cc1
s -CE,=V,,,
s -C&=V,,
t ,,=Min.
II/O=omA
3o DlA
VIN=VI~ or V,II
I _cc2
s -CE,=o.2v,
t _cYa.B=P~s
I I I 31* ^{s-C&=S-vcc-0.2v Im--om}
VIN=S-vCC-O2V.
or 0.2V
I
I
I
I