LH28F160SGED-L10 Datasheet, PDF (1/42 Pages) Sharp Electrionic Components – 16 M-bit (512 kB x 16 x 2-Bank) SmartVoltage Dual Work Flash Memory

LH28F160SGED-L10
LH28F160SGED-L10
DESCRIPTION
The LH28F160SGED-L10 Dual Work flash memory
with SmartVoltage technology is a high-density,
low-cost, nonvolatile, read/write storage solution for
a wide range of applications. The LH28F160SGED-
L10 is the highest density, highest performance
non-volatile read/write solution for solid-state
storage applications. LH28F160SGED-L10 can
read/write/erase at VCC = 2.7 V and VPP = 2.7 V.
Its low voltage operation capability realizes longer
battery life and suits for cellular phone application.
Its symmetrically-blocked architecture, flexible
voltage and enhanced cycling capability provide for
highly flexible component suitable for resident flash
arrays, SIMMs and memory cards. Its enhanced
suspend capabilities provide for an ideal solution for
code + data storage applications. For secure code
storage applications, such as networking, where
code is either directly executed out of flash or
downloaded to DRAM, the LH28F160SGED-L10
offers three levels of protection : absolute protection
with VPP at GND, selective hardware block locking,
or flexible software block locking. These alternatives
give designers ultimate control of their code security
needs.
FEATURES
• SmartVoltage Dual Work technology
– 2.7 V, 3.3 V or 5 V VCC
– 2.7 V, 3.3 V, 5 V or 12 V VPP
– Capable of performing erase, write and read
for each bank independently (Impossible to
perform read from both banks at a time).
• High performance read access time
– 100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/
120 ns (2.7 to 3.6 V)
16 M-bit (512 kB x 16 x 2-Bank)
SmartVoltage Dual Work Flash Memory
• Enhanced automated suspend options
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
• Enhanced data protection features
– Absolute protection with VPP = GND
– Flexible block locking
– Block erase/word write lockout during power
transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
– Thirty-two 32 k-word erasable blocks
• Enhanced cycling capability
– 100 000 block erase cycles
– 1.6 million block erase cycles/bank
• Low power management
– Deep power-down mode
– Automatic power saving mode decreases Icc
in static mode
• Automated word write and block erase
– Command user interface
– Status register
• ETOX^TM∗ V nonvolatile flash technology
• Package
– 48-pin TSOP Type I (TSOP048-P-1220)
Normal bend
∗ ETOX is a trademark of Intel Corporation.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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