HB1701 Datasheet, PDF (7/12 Pages) Seoul Semiconductor – 2.1*0.6*0.88 mm Inner Lens type Wavelength: 465 nm

5. Rank
V_F[V]
at I_F=5[mA]
2.75 - 2.85 (A)
2.85 - 2.95 (B)
2.95 – 3.05(C)
3.05 - 3.15(D)
2.75 - 2.85 (E)
2.85 - 2.95 (F)
2.95 – 3.05 (G)
3.05 - 3.15 (H)
2.75 - 2.85 (A)
2.85 - 2.95 (B)
2.95 – 3.05(C)
3.05 - 3.15(D)
2.75 - 2.85 (E)
2.85 - 2.95 (F)
2.95 – 3.05 (G)
3.05 - 3.15 (H)
I_V[mcd]
at I_F=5[mA]
11~17(B)
11~17(B)
11~17(B)
11~17(B)
17~27(C)
17~27(C)
17~27(C)
17~27(C)
11~17(B)
11~17(B)
11~17(B)
11~17(B)
17~27(C)
17~27(C)
17~27(C)
17~27(C)
λ_D[nm]
BIN
at I_F=5[mA]
460-465 (A)
1
460-465 (A)
2
460-465 (A)
3
460-465 (A)
4
460-465 (A)
5
460-465 (A)
6
460-465 (A)
7
460-465 (A)
8
465-470 (B)
9
465-470 (B)
10
465-470 (B)
11
465-470 (B)
12
465-470 (B)
13
465-470 (B)
14
465-470 (B)
15
465-470 (B)
16
6.Metarial
Item
Material
PCB
BT-Resin
Chip
InGaN
wire
Gold
Encapsulate
Epoxy
Electrode
Au
Rev.02
December 2010
www.seoulsemicon.com
Document No. : SSC-QP-7-07-24 (Rev.00)