HB1701 Datasheet, PDF (5/12 Pages) Seoul Semiconductor – 2.1*0.6*0.88 mm Inner Lens type Wavelength: 465 nm

4. Electro-Optical characteristic Diagram
Forward Current vs. Forward Voltage
Relative Luminous Intensity vs
Forward Current
10
1
2.9 3.0 3.1 3.2 3.3 3.4 3.5
Forward Voltage V (V)
F
Ambient Temperature vs.
Allowable Forward Current
400
350
300
250
200
150
100
50
0
5
10
15
20
25
30
Forward Current I [mA]
F
Radiation Diagram
25
20
90
15
120
60
10
150
5
180
0
0
20
40
60
80
100
Ambient temperature Ta(^o&)
30
0
Rev.02
December 2010
www.seoulsemicon.com
Document No. : SSC-QP-7-07-24 (Rev.00)