EWT801-S Datasheet, PDF (5/21 Pages) Seoul Semiconductor – Package: White PLCC2 White Color Technology: InGan/Gan

APCPCWM_4828539:WP_0000001WP_0000001
3. Electro-Optical characteristics
Parameter
Forward Voltage^*1*2
Luminous Intensity ^*3
Luminous Flux
Color Coordinate ^*4
Viewing Angle ^*5
Optical Efficiency
Thermal resistance ^*6
Temperature coefficient of V_F
-10℃ ≤ T ≤ 100 ℃
Temperature coefficient of X
-10℃ ≤ T ≤ 100 ℃
Temperature coefficient of Y
-10℃ ≤ T ≤ 100 ℃
Luminous Intensity Phi V / IV
Symbol
V_F
I_V
Φ
V
X
Y
2θ_1/2
η
op
Rth JA
Rth JS
TC_v
TC_x
TC_y
∂_Ω
Condition
I_F=20 mA
I_F=20 mA
I_F=20 mA
I_F=20 mA
I_F=20 mA
I_F=20 mA
I_F=20 mA
I_F=20 mA
I_F=20 mA
I_F =20mA
I_F =20mA
I_F =20mA
I_F =20mA
Min
2.7
1120
-
-
-
-
-
-
-
-
3.0
Typ
3.4
1680
5040
0.31
0.30
120
74.1
360
180
-2.64
-0.20
-0.22
Max
4.0
2240
-
-
-
-
-
-
-
-
3.1
Unit
V
mcd
mlm
-
-
deg.
lm/W
℃/W
℃/W
mV/℃
10^-3/℃
10^-3/℃
lm/cd
*1. A tolerance of ±0.05V on forward voltage measurements
*2. 99% yield of forward voltage is 2.8 ~ 3.8V
*3. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with
the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%
*4. Color difference between luminous flux and luminous intensity is Color difference : ± 0.01
*5 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
*6. Thermal resistance = Rth JA : Junction/ambient , Rth JS : Junction/solder point
Pad design for improved heat dissipation : Cu-area > Cu 16mm² per pad, FR4, t=1.6mm
EWT801-S
5/ 21
Rev. 04
29. November. 2011
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