YG104-ICH Datasheet, PDF (4/13 Pages) Seoul Semiconductor – Surface-mounted chip LED device

2. Absolute maximum ratings
Parameter
Symbol
Value
Power Dissipation
P_d
Forward Current
I_F
Peak Forward Current
I_FM ^*1
Reverse Voltage
V_R
Operating Temperature
T_opr.
Storage Temperature
T_stg.
≤ ≤ *1 I_FM conditions: Pulse width Tw 1msec and Duty ratio 1/10.
69
30
100
5
-40 ~ 85
-40 ~ 100
℃ (Ta=25 )
Unit
mW
mA
mA
V
℃
℃
3. Electro-Optical Characteristics
℃ (Ta=25 )
Parameter
Forward Voltage
Symbol Condition
V_F
㎃ I_F=20
Min
1.8
Reverse Current
Luminous Intensity*²
Wavelength
Spectral Bandwidth
Viewing Angle^*3 (Y)
I_R
Iv
λ_d
Δλ
θ2 _1/2
V_R=5V
-
㎃ I_F=20
20
㎃ I_F=20
568
㎃ I_F=20
-
㎃ I_F=20
-
Typ
2.1
-
30
570
15
140
Max
2.3
10
40
573
-
-
Unit
V
uA
mcd
nm
nm
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the
θ^{mechanical axis of the LED package.}
*3 1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
λ (Tolerance : I_v ± 10 %, _d ± 2 nm, V_F ± 0.1 V)
Rev. 01
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC- QP- 7- 07- 25 (Rev.0.0)