FR2001H-T Datasheet, PDF (4/11 Pages) Seoul Semiconductor – Surface-mounted chip LED device

1. Absolute maximum ratings
Parameter
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operation Temperature
Storage Temperature
Symbol
P_d
I_F
I_FM ^*1
V_R
T_opr.
T_stg.
*1 I_FM conditions: Pulse width Tw≤0.1ms and Duty ratio≤1/10.
Value
80
30
50
5
-40 ~ 100
-40 ~ 100
(Ta=25℃)
Unit
mW
mA
mA
V
℃
℃
2. Electro-Optical Characteristics
(Ta=25℃)
Parameter
Symbol Condition
Min
Typ Max Unit
Forward Voltage
V_F
I_F=20 ㎃
-
2.0
2.6
V
Reverse Current
Luminous Intensity^*2
Luminous Flux
Wavelength
Spectral Bandwidth
Viewing Angle^*3
I_R
I_V
Φ
λd
Δλ
2θ_1/2
V_R=5V
I_F=20 ㎃
I_F=20 ㎃
I_F=20 ㎃
I_F=20 ㎃
I_F=20 ㎃
-
-
10
㎂
-
460
-
mcd
-
1.45
-
lm
-
625
-
nm
-
15
-
nm
-
140
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 θ_1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : I_v ±10 %, λ_D ±2 nm, V_F ±0.1 V)
Rev. 00
September 2008
www.ZLED.com
Document No. : SSC-QP-7-07-24 (Rev.00)