C9WT728 Datasheet, PDF (4/17 Pages) Seoul Semiconductor – Specification

2. Absolute maximum ratings
Parameter
Power Dissipation
Forward Current
Peak Forward Current
(Per die)
Reverse Voltage (per die)
Operating Temperature
Storage Temperature
Symbol
P_d
I_F
I_FM ^*2
V_R
T_opr
T_stg
Value
324
90
100
5
-40 ~ +85
-40 ~ +100
Unit
mW
mA
mA
V
ºC
ºC
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 IFM was measured at T_W ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio.
3. Electric & Optical characteristics
Parameter
Forward Voltage (per die)
Reverse Current (per die)
Luminance Intensity ^*1
[4,700 ~ 7,000 K]
Luminance Intensity ^*1
[2,600 ~ 4,700 K ]
Luminance Flux
[CIE X = 0.31, Y = 0.31]
Color Temperature
Optical Efficiency
Viewing Angle ^*2
Color Rendering Index
Symbol
V_F
I_R
Condition
I_F =20mA
V_R=5V
I_V
I_F =60mA
I_V
I_F =60mA
Φ_V
CCT
Ŋ_elc
2θ_½
Ra
I_F =60mA
I_F =60mA
I_F =60mA
I_F =60mA
Min
3.0
-
4.0
4.0
-
2,600
-
-
Typ
Max Unit
3.3
3.6
V
-
10
µA
4.8
-
cd
4.5
-
cd
14.5
73
120
95
-
lm
7,000
-
-
K
lm/W
deg
*1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%
*2. 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
Rev. 03
June 2009
www.acriche.com
SSC-QP-7-07-24 (Rev.00)