AM101-DP Datasheet, PDF (4/13 Pages) Seoul Semiconductor – Surface-mounted chip LED device

1. Absolute maximum ratings
Parameter
Symbol
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operation Temperature
Storage Temperature
P_d
I_F
I_FM ^*1
V_R
T_opr.
T_stg.
*1 I_FM conditions: Pulse width Tw≤0.1ms and Duty ratio≤1/10.
Value
65
30
50
5
-30 ~ 85
-40 ~ 100
(Ta=25℃)
Unit
mW
mA
mA
V
℃
℃
2. Electro-Optical Characteristics
(Ta=25℃)
Parameter-
Symbol Condition Min Typ Max Unit
Forward Voltage
Reverse Current
Luminous Intensity^*2
Wavelength
Spectral Bandwidth
Viewing Angle^*3
V_F
I_R
I_V
λd
Δλ
2θ_1/2
I_F=20 ㎃
1.9
2.0
2.3
V
V_R=5V
-
-
10
㎂
I_F=20 ㎃
80
120
-
mcd
I_F=20 ㎃
600 606
615
nm
I_F=20 ㎃
-
30
-
nm
I_F=20 ㎃
-
120
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 θ_1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : I_v ±10 %, λ_D ±2 nm, V_F ±0.1 V)
Rev. 00
September 2008
www.ZLED.com
Document No. : SSC-QP-7-07-24 (Rev.00)