50162801 Datasheet, PDF (4/8 Pages) Sensortechnics GmbH – High energy physics

Near Ultraviolet (NUV) SiPMs
Device characteristics (cont.) ^{(8, 9)}
Gain as fct of overvoltage
Relative variation of gain with temperature
as fct of overvoltage
Overvoltage [V]
Temperature dependence of poly-silicon
quenching resistance
Overvoltage [V]
Photo detection efficiency (PDE) as fct of wavelength
(crosstalk and afterpulse not included)
Temperature [°C]
Wavelength [nm]
Version 29-07-15
Subject to change without notice
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