SKM50GB123D_1 Datasheet, PDF (4/6 Pages) Semikron International – SEMITRANS® M IGBT Modules

SKM 50 GB 123 D…
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Fig. 13 Typ. gate charge characteristic
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WGRII

WGRQ
WU
WI
C [nF]
100
I_Cpuls = 50 A
10
502C.vpo
V_GE = 0 V
f = 1 MHZ
Ciss
1
Coss
Crss
0,1
0
10
20
30
Fig. 14 Typ. capacitances vs.V_CE
40
VCE [V]
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T_j = 125 °C
V_CE = 600 V
V_GE = + 15 V
R_Gon = 27 Ω
R_Goff = 27 Ω
induct. load _
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WGRII
WGRQ
WU
T_j = 125 °C
V_CE = 600 V
V_GE = + 15 V
I_C = 40 A
induct. load
WI

     
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Fig. 15 Typ. switching times vs. I_C
Fig. 17 Typ. CAL diode forward characteristic
B 6 – 84






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Fig. 16 Typ. switching times vs. gate resistor R_G

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 Ω
 Ω
 Ω
 Ω
60 Ω

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Fig. 18 Diode turn-off energy dissipation per pulse
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