SKM50GB123D_1 Datasheet, PDF (1/6 Pages) Semikron International – SEMITRANS® M IGBT Modules

Absolute Maximum Ratings
Symbol Conditions ¹⁾
V_CES
V_CGR
I_C
I_CM
V_GES
P_tot
T_j, (T_stg)
V_isol
humidity
climate
R_GE = 20 kΩ
T_case = 25/80 °C
T_case = 25/80 °C; t_p = 1 ms
per IGBT, T_case = 25 °C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
Diodes
I_F= – I_C
I_FM= – I_CM
I_FSM
I²t
T_case = 25/80 °C
T_case = 25/80 °C; t_p = 1 ms
t_p = 10 ms; sin.; T_j = 150 °C
t_p = 10 ms; T_j = 150 °C
Values
... 123 D
1200
1200
50 / 40
100 / 80
± 20
310
– 40 . . .+150 (125)
2 500
Class F
40/125/56
50 / 40
100 / 80
550
1500
Units
V
V
A
A
V
W
°C
V
A
A
A²s
Characteristics
Symbol Conditions ¹⁾
V_(BR)CES
V_GE(th)
I_CES
I_GES
V_CEsat
V_CEsat
g_fs
V_GE = 0, I_C = 1 mA
V_GE = V_CE, I_C = 2 mA
V_GE
V_CE
=
=
0
V_CES



T_j
T_j
=
=
25
125
°C
°C
V_GE = 20 V, V_CE = 0
I_C
I_C
=
=
40
50
A
A



V_GE = 15 V;
T_j = 25 (125)


°C 
V_CE = 20 V, I_C = 40 A
C_CHC
C_ies
C_oes
C_res
L_CE
per IGBT

V_GE = 0
V_CE = 25 V
f = 1 MHz
t_d(on)
t_r
t_d(off)
t_f
E_on ⁵⁾
E_off ⁵⁾
Diodes ⁸⁾
V_F = V_EC
V_F = V_EC
V_TO
r_T
I_RRM
Q_rr

V_CC = 600 V
V_GE = + 15 V / - 15 V³⁾
I_C = 40 A, ind. load
R_Gon = R_Goff = 27 Ω
T_j = 125 °C
I_F
I_F
=
=
40
50
A
A



V_GE
T_j =
= 0 V;
25 (125)
°C



T_j = 125 °C
T_j = 125 °C
I_F = 40 A; Tj = 25 (125) °C²⁾
I_F = 40 A; T_j = 25 (125) °C²⁾
Thermal Characteristics
R_thjc
per IGBT
R_thjc
per diode
R_thch
per module
min.
≥ V_CES
4,5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,3
3
–
2,5(3,1)
2,7(3,5)
30
–
3300
500
220
–
70
60
400
45
7
4,5
max.
–
6,5
1
–
200
3(3,7)
–
–
350
4000
600
300
30
–
–
–
–
–
–
– 1,85(1,6) 2,2
– 2,0(1,8) –
–
–
1,2
–
–
22
– 23(35) –
– 2,3(7) –
–
–
0,4
–
–
0,7
–
–
0,05
Units
V
V
mA
mA
nA
V
V
S
pF
pF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
SEMITRANS^® M
IGBT Modules
SKM 50 GB 123 D
SKM 50 GAL 123 D
SEMITRANS 2
GB
GAL
Features
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * I_cnom
• Latch-up free
• Fast & soft inverse CAL
diodes⁸⁾
• Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
• Large clearance (10 mm) and
creepage distances (20 mm).
Typical Applications: → B 6 - 85
• Three phase inverter drives
• Switching (not for linear use)
1) _{Tcase = 25 °C, unless otherwise}
specified
2) _{IF = – IC, VR = 600 V,}
– di_F/dt = 800 A/µs, V_GE = 0 V
3) _{Use VGEoff = -5 ... -15 V}
5) _{See fig. 2 + 3; RGoff = 27 Ω}
8) _{CAL = Controlled Axial Lifetime}
Technology.
Case and mech. data → B 6 - 86
SEMITRANS 2
© by SEMIKRON
0898
B 6 – 81