 English |
|
|
|
|
|
|
|
| SKM50GB123D_1 Datasheet, PDF (3/6 Pages) Semikron International – SEMITRANS® M IGBT Modules | |||
| |||
| ◁ |
Tj = 150 °C
VGE > 15 V
,& >$@
9
9
9
9
9
9
;54
9&( >9@
Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C
Pcond(t) = VCEsat(t) . IC(t)
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t)
VCE(TO)(Tj) ⤠1,5 + 0,002 (Tj - 25) [V]
typ.: rCE(Tj) = 0,02 + 0,00008 (Tj - 25) [â¦]
max.: rCE(Tj) = 0,03 + 0,00010 (Tj - 25) [â¦]
valid
for
VGE
=
+
15
+
â
2
1
[V]; IC > 0,3 ICnom
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
© by SEMIKRON
Fig. 8 Rated current vs. temperature IC = f (TC)
,& >$@
;54
9
9
9
9
9
9
9&( >9@
Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C
,& >$@
;54
9*( >9@
Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V
0898
B 6 â 83
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese