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| HFP4N60 Datasheet, PDF (4/8 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET | |||
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Typical Characteristics (continued)
1.2
1.1
1.0
â» Note :
0.9
1. VGS=0V
2. ID=250ã
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R
DS(on)
101
100 µs
1 ms
10 ms
100 ms
100
DC
10-1
* Notes :
1. T = 25 oC
C
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Note :
1. VGS = 10 V
2. ID = 2.0 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [ â]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
â» Notes :
1. Zθ JC(t) = 1.25 â/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
PDM
single pulse
t1
t2
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,June 2005
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