HFP4N60 Datasheet, PDF (2/8 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET

Electrical Characteristics T_C=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
V_{GS Gate Threshold Voltage}
V_DS = V_GS, I_D = 250 ㎂
2.5
R_DS(ON) Static Drain-Source
On-Resistance
V_GS = 10 V, I_D = 2.0 A
--
Off Characteristics
BV_{DSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂}
600
ΔBV_DSS Breakdown Voltage Temperature
/ΔT_J Coefficient
I_D = 250 ㎂, Referenced to25℃
--
I_{DSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V}
--
V_DS = 480 V, T_C = 125℃
--
I_GSSF Gate-Body Leakage Current,
Forward
V_GS = 30 V, V_DS = 0 V
--
I_GSSR Gate-Body Leakage Current,
Reverse
V_GS = -30 V, V_DS = 0 V
--
Dynamic Characteristics
C_{iss Input Capacitance}
--
C_oss Output Capacitance
V_DS = 25 V, V_GS = 0 V,
--
f = 1.0 MHz
C_rss Reverse Transfer Capacitance
--
Switching Characteristics
t_{d(on) Turn-On Time}
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
V_DS = 300 V, I_D = 4.0 A,
--
R_G = 25 Ω
--
--
(Note 4,5)
--
V_DS = 480V, I_D = 4.0 A,
--
V_GS = 10 V
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
I_SM Pulsed Source-Drain Diode Forward Current
--
V_SD Source-Drain Diode Forward Voltage I_S = 4.0 A, V_GS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S = 4.0 A, V_GS = 0 V
--
di_F/dt = 100 A/μs (Note 4)
--
Typ Max Units
--
4.5
V
2.0 2.5
Ω
--
--
V
0.65 -- V/℃
--
1
㎂
--
10
㎂
-- 100 ㎁
-- -100 ㎁
600 780 ㎊
65
85
㎊
11
14
㎊
15
30
㎱
40
80
㎱
50 100 ㎱
40
80
㎱
15 20 nC
3.4
--
nC
6.7
--
nC
-- 4.0
A
--
16
--
1.4
V
300 --
㎱
2.2
--
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=27.5mH, I_AS=4.0A, V_DD=50V, R_G=25Ω, Starting T_J =25°C
3. I_SD≤4.0A, di/dt≤300A/μs, V_DD≤BV_DSS , Starting T_J =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,June 2005