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| HFP4N60 Datasheet, PDF (3/8 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET | |||
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Typical Characteristics
V
101 Top: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottem 5.0V
100
10-1
10-1
â» Note :
1. 250ã² Pulse Test
2. TC=25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
10
VGS=10V
8
6
VGS=20V
4
2
â» Note : TJ=25â
00
2
4
6
8
10
12
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
600
Coss
400
* Note ;
1. VGS = 0 V
2. f = 1 MHz
200
Crss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150â
100
10-1
2
25â
-55â
â» Note :
1. VDS=40V
2. 250ã² Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
150â 25â
â» Note :
1. VGS=0V
2. 250ã² Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
* Note : ID = 4A
0
0
2
4
6
8
10
12
14
16
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
â SEMIHOW REV.A0,June 2005
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