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HFP2N65 Datasheet, PDF (4/7 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
* Note :
1. VGS = 0 V
2. ID = 250 µA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100
100 ms
DC
10-1
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Note :
1. V = 10 V
GS
2. ID = 0.9 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
100 D=0.5
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
* Notes :
1. Z (t) = 2.32 oC/W Max.
θJC
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
PDM
10-2
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,July 2007
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