HFP2N65 Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15 V
10 V
8.0 V
7.0 V
10⁰
6.5 V
6.0 V
Bottom : 5.5 V
10^-1
10^-2
10^-1
* Note :
1. 250μ s Pulse Test
2. T_C = 25^oC
10⁰
10¹
V_DS , Drain-Source Voltage [V]
Figure 1. On Region Characteristics
18
15
V_GS = 10V
12
V_GS = 20V
9
6
3
* Note : T_J = 25^oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I_D , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
450
400
350
300
250
200
150
100
50
0
10^-1
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
C_oss
※ Note ;
1. V_GS = 0 V
C_rss
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 130V
V_DS = 325V
8
V_DS = 520V
6
4
2
* Note : I_D = 1.8 A
0
0 1 2 3 4 5 6 7 8 9 10
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,July 2007