HFP10N65S_14 Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
10¹
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10^-1
* Notes :
1. 300us Pulse Test
2. T_C = 25^oC
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
2.0
1.5
V_GS = 10V
1.0
V_GS = 20V
0.5
* Note : T = 25oC
J
0.0
0
5
10
15
20
25
30
35
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
C_iss
1500
1000
500
C_oss
Note ;
1. V = 0 V
GS
2. f = 1 MHz
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
25^oC
150^oC
-55^oC
* Notes :
1. V = 40V
DS
2. 300us Pulse Test
0.1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
0.1
0.2
150^oC
25^oC
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 130V
10
V_DS = 325V
8
V_DS = 520V
6
4
2
* Note : I_D = 9.5A
0
0
4
8
12
16
20
24
28
32
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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