HFP10N65S_14 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

March 2014
HFP10N65S
650V N-Channel MOSFET
BV_DSS = 650 V
R_{DS(on) typ} ȍ
I_D = 9.5 A
FEATURES
ƒ Originative New Design
ƒ Superior Avalanche Rugged Technology
ƒ Robust Gate Oxide Technology
ƒ Very Low Intrinsic Capacitances
ƒ Excellent Switching Characteristics
ƒ Unrivalled Gate Charge : 29 nC (Typ.)
ƒ Extended Safe Operating Area
ƒ Lower R_DS(ON) ȍ7\S#9_GS=10V
ƒ 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
650
I_D
Drain Current
– Continuous (T_C = 25ఁ͚͑
9.5
Drain Current
– Continuous (T_C = 100ఁ͚͑
5.7
I_DM
Drain Current
– Pulsed
(Note 1)
38
V_GS
Gate-Source Voltage
ρ30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
700
I_AR
Avalanche Current
(Note 1)
9.2
E_AR
Repetitive Avalanche Energy
(Note 1)
15.6
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
P_D
T_J, T_STG
T_L
Power Dissipation (T_C = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
156
1.25
-55 to +150
300
Units
9
$
$
$
9
P-
$
P-
9QV
:
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Thermal Resistance Characteristics
Symbol
R_șJC
R_șCS
R_șJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.8
--
62.5
Units
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