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HFP10N65S_14 Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET | |||
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Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 áº
2.0
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.75 AÍ
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 áº
650
Ô©BVDSS Breakdown Voltage Temperature
/Ô©TJ Coefficient
ID = 250 áº, Referenced to 25à
--
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 VÍ
--
VDS = 520 V, TC = 125à°Í
--
IGSSF Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
--
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHzÍ
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 9.5 A,
--
RG = 25 à´µÍ
--
--
1RWH
--
VDS = 520V, ID = 9.5 A,
--
VGS = 10 V
--
1RWH
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 9.5 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.5 A, VGS = 0 V
--
diF/dt = 100 A/ÈV (Note 4)
--
Typ Max Units
--
4.0
9
0.8 0.98 à´µ
--
--
9
0.7
-- 9à´
--
1
áº
--
10
áº
-- 100 á¹
-- -100 á¹
1450 1885 á
145 190 á
13
17
á
23
55
á©
69 150 á©
144 300 á©
77 165 á©
29 38 Q&
6.8
--
Q&
10.3 --
Q&
-- 9.5
$
--
38
--
1.4
9
420 --
á©
4.2
--
Ë©&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISDÂ$GLGWÂ$ÈV9DDÂ%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
5. Essentially Independent of Operating Temperature
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