SSM2306A Datasheet, PDF(4/4 Page) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

SSM2306A Datasheet, PDF (4/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

◁

Elektronische Bauelemente

SSM2306A

5A, 30V,RDS(ON) 35m

N-Channel Enhancement Mode Power Mos.FET

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

120Ðº/W

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Fig 12. Gate Charge Waveform

Any changing of specification will not be informed individual

Page 4 of 4