SSM2306A Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSM2306A
5A, 30V,RDS(ON) 35m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSM2306A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SSM2306A is universally used for all commercial-
industrial surface mount applications.
Features
* Lower On-Resistance
* Capable Of 2.5V Gate drive
D
2 3 0 6A
G
GD
S
S
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0°
10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, VGS @4.5V
Continuous Drain Current,³ VGS @4.5V
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25^oC
ID@TA=70 ^oC
IDM
PD@TA=25^oC
Tj, Tstg
Ratings
30
±12
5.0
4.0
20
2.7
0.02
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Ratings
45
Unit
o_C/W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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