SSM2306A Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSM2306A
5A, 30V,RDS(ON) 35m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Min. Typ.
Max. Unit
Drain-Source Breakdown Voltage
BVDSS
30
_
_
V
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
_
0.1
_
o
V/ C
Gate Threshold Voltage
VGS(th)
0.5
_
1.2
V
Gate-Source Leakage Current
IGSS
_
_
±100
nA
Drain-Source Leakage Current (Tj=25^oC)
_
IDSS
Drain-Source Leakage Current(Tj=150^oC)
_
_
Static Drain-Source On-Resistance
Total Gate Charge²
_
RD S(O N )
_
_
Qg
_
_
1
uA
_
25
uA
_
30
_
35
m
_
50
_
90
8.5
15
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Qgs
_
1.5
_
nC
Qgd
_
3.2
_
Td(ON)
_
6
_
Rise Time
Turn-off Delay Time
Tr
_
20
_
nS
Td(Off)
_
20
_
Fall Time
Tf
_
3
_
Input Capacitance
Ciss
_
660
1050
Output Capacitance
Coss
_
90
_
pF
Reverse Transfer Capacitance
Crss
_
70
_
Forward Transconductance
Gfs
_
13
_
S
Test Condition
VGS=0V, ID=250uA
Reference to 25^oC, ID=1mA
VDS=VGS, ID=250uA
VGS=±20V
VDS=30V,VGS=0
VDS=24V,VGS=0
VGS=10V, ID=5A
VGS=4.5V, ID=5 A
VGS=2.5V, ID=2.6A
VGS=1.8V, ID=1 A
ID=5A
VDS=16V
VGS= 4.5V
VDD=15V
ID=5A
VGS=10V
RG=3.3
RD=3
VGS=0V
VDS=25V
f=1.0MHz
VDS=5V, ID=5A
Source-Drain Diode
Parameter
Forward On Voltage²
Reverse Recovery Time²
Reverse Recovery Change
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
14
7
Max.
1.2
_
_
Unit Test Condition
V
IS=1.2A, VGS=0V.
nS
IS=5A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 in²copper pad of FR4 board;120^oC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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