SSI2007 Datasheet, PDF (3/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSI2007
N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ
P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ
N & P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
Td(ON)
Tr
Td(OFF)
Tf
-
50
-
-
74.5
-
-
13
-
-
10.8
-
-
8
-
-
10.2
-
-
1.15
-
-
1.1
-
-
0.06
-
-
0.08
-
-
0.15
-
-
0.44
-
-
0.23
-
-
0.18
-
-
22
-
-
45
-
-
80
-
-
140
-
-
700
-
-
1500
-
-
380
-
-
2100
-
Unit
Teat Conditions
N-Ch:
VDS=10V, VGS=0,
f=1MHz
pF
P-Ch:
VDS= -10V, VGS=0,
f=100KHz
N-Ch:
VDS=10V, VGS=4.5V,
ID=0.6A
nC
P-Ch:
VDS= -10V, VGS= -4.5V,
ID= -0.6A
N-Ch:
VDD=10V, I D=0.5A,
VGEN=4.5V,
RL=10Ω, RG=6Ω.
nS
P-Ch:
VDD= -10V, I D= -0.5A,
VGEN= -4.5V,
RL=10Ω, RG=6Ω.
http://www.SeCoSGmbH.com/
17-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
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