SSI2007 Datasheet, PDF (2/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSI2007
N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ
P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ
N & P-Ch Enhancement Mode Power MOSFET
THERMAL RESISTANCE RATINGS
Part Number
Parameter
Symbol
N-Channel
P-Channel
Typ.
Max. Typ. Max.
Junction-to-Ambient Thermal Resistance ^{1 T≦10S}
RθJA
Steady State
285
335
290 335
340
405
350 430
T≦10S
Junction-to-Ambient Thermal Resistance ²
RθJA
Steady State
385
450
385 460
455
545
465 555
Junction-to-Case Thermal Resistance
Steady State
RθJC
260
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.
300
280 320
Unit
°C / W
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Static
N-Ch
20
-
-
Drain-Source Breakdown Voltage
V(BR)DSS
P-Ch
-20
-
-
Zero Gate Voltage Drain Current
N-Ch
P-Ch
-
-
100
IDSS
-
-
-100
Gate-Source Leakage
N-Ch
P-Ch
-
-
±5
IGSS
-
-
±5
Gate-Threshold Voltage
N-Ch
P-Ch
VGS(TH)
0.45 0.58 0.85
-0.45 -0.55 -0.8
N-Ch
-
220 260
P-Ch
-
600 800
Drain-Source On Resistance
N-Ch
P-Ch
RDS(ON)
-
260 310
-
780 1000
N-Ch
-
320 380
P-Ch
-
960 1250
Forward Transconductance
N-Ch
P-Ch
-
2
-
gFS
-
1.25
-
Body-Drain Diode Ratings
Diode Forward On–Voltage
N-Ch
P-Ch
0.5 0.7
1.1
VSD
-0.5 -0.65 -1.1
Unit
Teat Conditions
VGS=0, ID=250µA
V
VGS=0, ID=-250µA
VDS=20V, VGS=0
nA
VDS= -20V, VGS=0
µA VDS=0 , VGS= ±5V
VDS=VGS, ID=250µA
V
VDS=VGS, ID= -250µA
VGS=4.5V, ID=0.55A
VGS= -4.5V, ID= -0.45A
VGS=2.5V, ID=0.45A
mΩ
VGS= -2.5V, ID= -0.35A
VGS=1.8V, ID=0.35A
VGS= -1.8V, ID= -0.25A
VDS=5V, ID= 0.55A
S
VDS= -5V, ID= -0.45A
IS=150mA, VGS=0
V
IS= -150mA, VGS=0
http://www.SeCoSGmbH.com/
17-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
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