SSI2007 Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSI2007
N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ
P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SSI2007 is N and P Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit
Load Switch
DEVICE MARKING:
07* ^{Date Code}
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size
7’ inch
SOT-563
A
B
J
D
C
F
G
H
E
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50 1.70
1.50 1.70
0.525 0.60
1.10 1.30
-
0.05
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
Top View
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Part Number
Parameter
Symbol
N-Channel
P-Channel
Unit
10S
Steady State
10S Steady State
Drain – Source Voltage
VDS
20
-20
V
Gate – Source Voltage
VGS
±6
V
Continuous Drain Current ¹
TA= 25°C
TA= 70°C
0.88
0.8
-0.64
-0.56
ID
A
0.71
0.64
-0.51
-0.45
Power Dissipation ¹
TA= 25°C
TA= 70°C
0.37
PD
0.23
0.3
0.37
0.29
W
0.19
0.23
0.18
Continuous Drain Current ²
TA= 25°C
TA= 70°C
0.76
0.69
-0.54
-0.5
ID
A
0.6
0.55
-0.43
-0.4
Power Dissipation ²
Pulsed Drain Current ³
TA= 25°C
TA= 70°C
0.27
0.22
0.27
0.22
PD
W
0.17
0.14
0.17
0.14
IDM
1.4
-1
A
Maximum Junction-to-Lead
Operating Junction & Storage Temperature
Range
RθJL
TJ, TSTG
260
150, -55~150
°C / W
°C
http://www.SeCoSGmbH.com/
17-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
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