SMG351AN Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
Characteristics Curve
5
VGS=10V
4.5V
6.0V
4
SMG351AN
3A, 30V,RDS(ON) 60m
N-Channel Enhancement Mode Power Mos.FET
5
VDS=5V
4
3
3.5V
2
1
3.0V
0
0
0.5
1
1..5
2
VDS Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.215
0.200
ID=3A
0.175
0.150
TA=125к
0.125
0.100
0.075
TA=25к
0.050
3
4
5
6
7
8
9
10
VGS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
3
2
TA=125к
1
25к
-55к
0
2
2.5
3
3..5
4
VGS Gate-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3A
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
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