 English |
|
|
|
|
|
|
|
| SMG351AN Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET | |||
| |||
| ◁ |
Elektronische Bauelemente
SMG351AN
3A, 30V,RDS(ON) 60m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th) 1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
-
-
V VGS=0, ID=250uA
0.1
-
V/к Reference to 25к, ID=1mA
-
2.5
V VDS=VGS, ID=250uA
13
-
S VDS=5V, ID=3.0A
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
10
uA VDS=24V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
-
RDS(ON)
-
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Td(off)
-
Tf
-
Ciss
-
Coss
-
Crss
-
Rg
-
Symbol
VSD
Trr
Qrr
Min.
-
-
-
-
-
8.5
1.5
3.2
6
20
20
3
660
90
70
0.9
Typ.
-
14
7
60
100
-
-
-
-
-
-
-
-
-
-
-
Max.
1.2
-
-
VGS=10V, ID=3.0A
m
VGS=4.5V, ID=2.0A
ID=3A
nC VDS=16V
VGS=4.5V
VDS=15V
ID=3A
ns VGS=10V
RG=3.3
RD=3
VGS=0V
pF VDS=25V
f=1.0MHz
VGS=15mV, f=1.0MHz
Unit
Test Conditions
V IS=1.2A, VGS=0V
ns IS=3A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese