SMG351AN Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG351AN
3A, 30V,RDS(ON) 60m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG351AN uses advanced trench technology to
provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or
in PWM applications.
Features
* Lower Gate Charge
* Small Package Outline
A
L
3
S
Top View
B
2
1
D
G
C
H
Drain
Gate
Source
J
K
D
SC-59
Dim Min Max
A
2.70 3.10
B
1.40 1.60
C
1.00 1.30
D
0.35 0.50
G
1.70 2.10
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
0.85 1.15
S
2.40 2.80
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
Ratings
30
±20
3
10
1.38
0.01
-55 ~ +150
Value
90
Unit
V
V
A
A
W
W/к
к
Unit
к/W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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