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| SMG2306A_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET | |||
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Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2306A
5 A, 30 V, RDS(ON) 35 mΩ
N-Channel Enhancement Mode Power Mos.FET
01-June-2005 Rev. B
Page 3 of 4
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