SMG2306A_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG2306A
5 A, 30 V, R_DS(ON) 35 mΩ
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial
applications.
FEATURES
z Capable of 2.5V gate drive
z Lower on-resistance
PACKAGE DIMENSIONS
A
L
B
Top View
C
F
G
H
E
D (Typ.)
Drain
Gate
Source
K
M
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0°
10°
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Drain Current³ ,VGS@4.5V
Drain Current³ ,VGS@4.5V
Pulsed Drain Current^1,
V_GS
I_D @Ta=25℃
I_D @Ta=70℃
I_DM
Power Dissipation
P_D @Ta=25℃
Operating Junction and Storage Temperature Range Tj, Tstg
Linear Derating Factor
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
Ratings
30
±12
5
4
20
1.38
-55 ~ +150
0.01
Value
90
Unit
V
V
A
A
A
W
℃
W/℃
Unit
℃/W
01-June-2005 Rev. B
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