 English |
|
|
|
|
|
|
|
| SMG2306A_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET | |||
| |||
| ◁ |
Elektronische Bauelemente
SMG2306A
5 A, 30 V, RDS(ON) 35 mΩ
N-Channel Enhancement Mode Power Mos.FET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol Min.
Drain-Source Breakdown Voltage
BVDSS
30
Breakdown Voltage Temperature Coefficient â³BVDSS /â³Tj
-
Gate Threshold Voltage
VGS(th) 0.5
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25â)
-
IDSS
Drain-Source Leakage Current(Tj=70â)
-
-
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Td(off)
-
Tf
-
Ciss
-
Coss
-
Crss
-
Typ.
-
0.1
-
13
-
-
-
-
-
-
-
8.5
1.5
3.2
6
20
20
3
660
90
70
Max.
-
-
1.2
-
±100
1
25
30
35
50
90
15
-
-
-
-
-
-
1050
-
-
Unit
Test Conditions
V VGS=0, ID=250uA
V/â Reference to 25â, ID=1mA
V VDS=VGS, ID=250uA
S VDS=5V, ID=5A
nA VGS= ±12V
uA VDS=30V, VGS=0
uA VDS=24V, VGS=0
VGS=10V, ID=5A
VGS=4.5V, ID=5A
mâ¦
VGS=2.5V, ID=2.6A
VGS=1.8V, ID=1.0A
ID=5A
nC VDS=16V
VGS=4.5V
VDS=15V
ID=5A
ns VGS=10V
RG=3.3â¦
RD=3â¦
VGS=0V
pF VDS=25V
f=1.0MHz
SOURCE-DRAIN DIODE
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD
-
-
1.2
V IS=1.2A, VGS=0
Reverse Recovery Time2
Reverse Recovery Charge
Trr
-
14
-
ns IS=5A, VGS=0V
Qrr
-
7
-
nC dI/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthâ¦300us, duty cycleâ¦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270â/W when mounted on Min. copper pad.
01-June-2005 Rev. B
Page 2 of 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese