2SJ655 Datasheet, PDF (4/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

2SJ655
--10
VDS= --50V
--9 _{ID= --12A}
--8
VGS -- Qg
--7
--6
--5
--4
--3
--2
--1
0
0
5 10 15 20 25 30 35
Total Gate Charge, Qg -- nC
PD -- Ta
2.5
40 45
IT05382
ASO
--100
7
5
IDP= --48A
3 ID= --12A
2
<10µs
1001_µ^0sµs
--10
1ms
7
5
3
2
--1.0
Operation in this area
is limited by RDS(on).
DC _{op1e0r0a1mt0imosns}
7
5
3
2 Tc=25°C
--0.1 ^{Single pulse}
--1.0
23
5 7 _--10
23
5 7 _--100
2
Drain-to-Source Voltage, VDS -- V IT05383
PD -- Tc
35
30
2.0
25
1.5
20
1.0
0.5
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05384
EAS -- Ta
120
15
10
5
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT05385
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
IT10478
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