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2SJ655 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Ordering number : EN7712A
2SJ655
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ655 General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• 4V drive.
• Ultrahigh-speed switching.
• Motor drive, DC / DC converter.
• Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=--50V, L=1mH, IAV=--12A
*2 L≤1mH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : J655
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS= ±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
ID=--6A, VGS=--10V
ID=--6A, VGS=--4V
Ratings
Unit
--100
V
±20
V
--12
A
--48
A
2.0
W
25
W
150
°C
--55 to +150
°C
144
mJ
--12
A
min
--100
--1.2
9
Ratings
Unit
typ
max
V
--1 µA
±10 µA
--2.6
V
13
S
100
136 mΩ
136
190 mΩ
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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