2SJ655 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7508-003
10.0
3.2
1.6
1.2
0.75
123
2.55
2.55
2SJ655
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--12A
VDS=--50V, VGS=--10V, ID=--12A
VDS=--50V, VGS=--10V, ID=--12A
IS=--12A, VGS=0V
Ratings
Unit
min
typ
max
2090
pF
155
pF
108
pF
17
ns
95
ns
187
ns
95
ns
41
nC
7
nC
9
nC
--0.88
--1.2
V
Switching Time Test Circuit
4.5
2.8
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
G
VDD= --50V
ID= --6A
RL=8.33Ω
D
VOUT
2SJ655
P.G
50Ω
S
Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
2SJ655
VDD
No.7712-2/5