CPH6445 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET

CPH6445
RDS(on) -- VGS
390
Ta=25°C
360
330
300
ID=0.7A
270
240
1.5A
210
180
150
120
90
60
30
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V IT14868
| yfs | -- ID
7
5
VDS=10V
3
2
1.0
7
5
3
2
Ta= ^--25°C
25^°C
0.1
7
75^°C
5
3
2
0.01
7
0.001 ^{2 3}
7
5
5 70.01 2 3 5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
SW Time -- ID
2 3 5 7 ₁₀
IT14870
VDD=30V
VGS=10V
3
td(off)
2
tf
10
7
td(on)
5
tr
3
2
0.1
23
5 7 _1.0
23
57
Drain Current, ID -- A
IT14872
VGS -- Qg
10
VDS=30V
9 _ID=3.5A
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
Total Gate Charge, Qg -- nC
IT14874
RDS(on) -- Ta
260
240
210
180
150
120
90
V GVVSG=GS4S=V=4,1.5I0DVV=,,I0ID.D7==A01.7.5AA
60
30
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14869
IS -- VSD
10
7
5
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
1000
7
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT14871
Ciss, Coss, Crss -- VDS
f=1MHz
5
Ciss
3
2
100
7
5
Coss
3
Crss
2
10
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT14873
ASO
3
2 _{IDP=14A (PW≤10μs)}
10
7
5
3
2
1.0
7
5
3
2
ID=3.5A
Operation in
is limited by
DC
this area
RDS(on).
operatio1n0(0Tm1a0s=m215sm1_°C0s0)^μ1s0μs
0.1
7
5
3 ^Ta=25°C
2 Single pulse
0.01 ^{When mounted on ceramic substrate (1200mm2×0.8mm)}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100
Drain-to-Source Voltage, VDS -- V IT14875
No. A1532-3/4