CPH6445 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
12
0.95
3
0.4
CPH6445
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3.5A
VDS=30V, VGS=10V, ID=3.5A
VDS=30V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
Ratings
Unit
min
typ
max
310
pF
40
pF
25
pF
6.0
ns
5.5
ns
27
ns
13
ns
6.8
nC
1.1
nC
1.4
nC
0.85
1.2
V
Switching Time Test Circuit
0.15
0.05
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=30V
ID=1.5A
RL=20Ω
D
VOUT
CPH6445
P.G
50Ω
S
ID -- VDS
1.8
1.6
3.0V
1.4
1.2
1.0
0.8
VGS= 2.5V
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT14866
5.0
VDS=10V
4.5
ID -- VGS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT14867
No. A1532-2/4