CPH6445 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET

Ordering number : ENA1532
CPH6445
SANYO Semiconductors
DATA SHEET
CPH6445
Features
• _{Low ON-resistance.}
• _{4V drive.}
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm²Ã—0.8mm)
Ratings
Unit
60
V
±20
V
3.5
A
14
A
1.6
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : ZX
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.7A, VGS=4.5V
ID=0.7A, VGS=4V
min
60
1.2
1.2
Ratings
Unit
typ
max
V
1
μA
±10
μA
2.6
V
2.0
S
92
117 mΩ
120
168 mΩ
132
185 mΩ
Continued on next page.
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21710PE TK IM TC-00002252 No. A1532-1/4