BFL4007 Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4007
Fig.3 trr Reverse Recovery Resistance Test Circuit
D
BFL4007
G
500μH
S
VDD=50V
Driver MOSFET
35
Tc=25°C
30 ^VGS=20V
25
ID -- VDS
10V ^15V
8V
20
15
10
6V
5
VGS=5V
0
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT15477
RDS(on) -- VGS
2.0
ID=7A
1.8
1.6
1.4
1.2
1.0
Tc=75°C
0.8
0.6
25°C
0.4
--25°C
0.2
0
3
5
7
9
11
13
15
Gate-to-Source Voltage, VGS -- V IT15479
| yfs | -- ID
3
2
VDS=10V
10
25^°C
7
5
3
Tc=
--25^°C
75^°C
2
1.0
7
5
3
0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
Drain Current, ID -- A
23 5
IT15481
40
VDS=20V
35
ID -- VGS
Tc= --25°C
30
25°C
25
75°C
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT15478
RDS(on) -- Tc
1.6
1.4
1.2
1.0
0.8
0.6
V ^{GS=10V, I D=7A}
0.4
0.2
0
--50
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
--25
0
25
50
75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT15480
VGS=0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Diode Forward Voltage, VSD -- V IT15482
No. A1689-3/5