BFL4007 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1689
BFL4007
SANYO Semiconductors
DATA SHEET
BFL4007
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Reverse recovery time trr=95ns (typ)}
• _{Input capacitance Ciss=1200pF (typ)}
• _{ON-resistance RDS(on)=0.52Ω (typ)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Source-to-Drain Diode Forward Current (DC)
Source-to-Drain Diode Forward Current (Pulse)
VDSS
VGSS
IDc*1
IDpack*2
IDP
IS
ISP
Allowable Power Dissipation
PD
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO’s ideal heat dissipation condition*)3
600
V
±30
V
14
A
8.7
A
49
A
14
A
49
A
2.0
W
40
W
Note :*1 Shows chip capability
Continued on next page.
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100/bag, 50/magazine
Marking
0.9
1.2
0.75
123
2.55
2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
FL4007
LOT No.
http://semicon.sanyo.com/en/network
60210QB TK IM TC-00002337 No. A1689-1/5