BFL4007 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4007
Continued from preceding page.
Parameter
Channel Temperature
Symbol
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *4
EAS
Avalanche Current *5
IAV
Note :*4 VDD=99V, L=5mH, IAV=8.5A (Fig.1)
*5 L≤5mH, single pulse
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Conditions
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See Fig.2
See Fig.2
See Fig.2
See Fig.2
VDS=200V, VGS=10V, ID=14A
VDS=200V, VGS=10V, ID=14A
VDS=200V, VGS=10V, ID=14A
IS=14A, VGS=0V
See Fig.3
IS=14A, VGS=0V, di/dt=100A/μs
Ratings
Unit
150
°C
--55 to +150
°C
215 mJ
8.5
A
Ratings
Unit
min
typ
max
600
V
100
μA
±100
nA
3
5
V
4.3
8.5
S
0.52
0.68
Ω
1200
pF
220
pF
43
pF
27
ns
72
ns
122
ns
48
ns
46
nC
8.6
nC
26.4
nC
1.1
1.5
V
95
ns
250
nC
Fig.1 Avalanche Resistance Test Circuit
D
L
≥50Ω
RG _G
S BFL4007
10V
0V
50Ω
VDD
Fig.2 Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤0.5%
G
VDD=200V
ID=7A
RL=28.6Ω
D
VOUT
BFL4007
P.G
RGS=50Ω ^S
No. A1689-2/5