2SC6081 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching

2SC6081
IC -- VBE
6
hFE -- IC
1000
VCE=2V
7
Ta=75°_C
VCE=2V
5
5
25°C
3
--25°C
4
2
3
2
1
0
0
1000
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT10564
hFE -- IC
Ta=25°C
VCE _=2.0V
100
7
5
3
2
10
0.01
1000
7
5
2 3 5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
fT -- IC
2 3 57
IT10565
VCE=10V
3
2
100
7
5
3
2
10
0.01
1000
7
5
23
5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
Cob -- VCB
2 3 57
IT10566
f=1MHz
3
2
100
7
5
3
2
10
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7}
Collector-to-Base Voltage, VCB -- V IT10568
VCE(sat) -- IC
7
5
IC / IB=50
3
2
100
7
5
3
2
10
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
Collector Current, IC -- A
IT10567
VCE(sat) -- IC
7
5
IC / IB=20
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.01
3
23
Ta=75^°_-C-25°C
25^°C
5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
VBE(sat) -- IC
2 3 57
IT10569
IC / IB=20
2
0.1
7
5
3
Ta=75^°C--25_°C
2
25^°C
0.01
0.01
23
5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
2 3 57
IT10570
1.0
Ta= --25^°C
7 ₂₅°C
75^°C
5
3
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7}
Collector Current, IC -- A
IT10571
No. A0278-3/4