2SC6081 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching

2SC6081
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=0.7A
VCB=10V, f=1MHz
IC=2.5A, IB=125mA
IC=2.5A, IB=125mA
IC=100µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
250
35
200
60
60
50
6
49
600
42
max
400
1.2
Unit
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7508-002
10.0
3.2
4.5
2.8
1.6
1.2
0.75
0.7
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
IC=20IB1= --20IB2=1.5A
OUTPUT
RL
+
470µF
VCC=25V
123
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
IC -- VCE
5.0
4.5
30mA 25mA
20mA
15mA
4.0
3.5
3.0
60mA50m45AmA40m3A5mA
10mA
2.5
5mA
2.0
1.5
2mA
1.0
0.5
0
IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT10562
IC -- VCE
2.0
5mA
1.8
4mA
1.6
1.4
9mA _8mA
1.2
10mA
1.0
3mA
2mA
0.8
0.6
1mA
0.4
0.2
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT10563
No. A0278-2/4