2SC6081 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching

Ordering number : ENA0278
2SC6081
SANYO Semiconductors
DATA SHEET
2SC6081
NPN Epitaxial Planar Silicon Transistor
50V / 5A High-Speed Switching
Applications
Applications
• _{High-speed switching applications (switching regulator, driver circuit).}
Features
• _{Adoption of MBIT process.}
• _{Large current capacitance.}
• _{Low collector-to-emitter saturation voltage.}
• _{High-speed switching.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=125mA
VCE=2V, IC=3.75A
Ratings
Unit
60
V
60
V
50
V
6
V
5
A
8
A
1
A
2
W
20
W
150
°C
--55 to +150
°C
min
200
50
Ratings
typ
Unit
max
10 µA
10 µA
560
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
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nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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