FH102A Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

FH102A
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
DC Current Gain Ratio
Base-to-Emitter Voltage Diffrence
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
hFE(small/large)
VBE(largel-smal)
fT
Cob
Cre
⏐^S21e⏐²¹
⏐^S21e⏐²²
NF
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=2V, IC=3mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
0.7
0.95
1.0
5
7
0.75
0.5
9
12
8
1.0
mV
GHz
1.2 pF
pF
dB
dB
1.8
dB
Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is
also shown.
Package Dimensions
unit : mm (typ)
7026-002
Electrical Connection
B1
B2
E2
0.25 0.15
6 54
0.05
1 23
0.65
2.0
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
C1
E1
C2
hFE -- IC
3
VCE=5V
2
100
7
5
3
2
10
7
5
3 5 7 _1.0
2 3 5 7 ₁₀
2 3 5 7 ₁₀₀ 2
Collector Current, IC -- mA
ITR10753
fT -- IC
2
VCE=5V
10
7
5
3
2
1.0
7
5
7 _1.0
2 3 5 7 ₁₀
2 3 5 7 ₁₀₀
2
Collector Current, IC -- mA
ITR10754
No. A1125-2/6