FH102A Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Ordering number : ENA1125
FH102A
SANYO Semiconductors
DATA SHEET
FH102A
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Features
• _{Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency}
greatly.
• _{The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package.}
• _{Optimal for differential amplification due to excellent thermal equilibrium and pair capability.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²âœ•0.8mm) 1unit
When mounted on ceramic substrate (250mm²âœ•0.8mm)
Ratings
Unit
20
V
10
V
2
V
70 mA
300 mW
500 mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Marking : 102
Symbol
ICBO
IEBO
hFE
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=20mA
min
90
Ratings
Unit
typ
max
1.0 μA
10 μA
200
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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60408AB TI IM TC-00001436 No. A1125-1/6